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www.irf.com 1 1/17/05 IRLR7811WPBF smps mosfet hexfet power mosfet parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 64 i d @ t c = 100c continuous drain current, v gs @ 10v 45 a i dm pulsed drain current 260 p d @t c = 25c power dissipation 71 p d @t a = 100c power dissipation* 1.5 w linear derating factor 0.48 w/c v gs gate-to-source voltage 12 v t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings notes through are on page 9 parameter typ. max. units r jc junction-to-case CCC 2.1 r ja junction-to-ambient (pcb mount)* CCC 50 c/w r ja junction-to-ambient CCC 110 thermal resistance applications benefits very low rds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current high frequency synchronous buck converters for computer processor power high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use lead-free v dss r ds(on) max q g 30v 10.5m ? 19nc d-pak irlr7811w downloaded from: http:///

2 www.irf.com parameter typ. max. units e as single pulse avalanche energy CCC 140 mj i ar avalanche current CCC 12 a e ar repetitive avalanche energy CCC 7.1 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 12a, v gs = 0v t rr reverse recovery time CCC 30 45 ns t j = 25c, i f =12a q rr reverse recoverycharge CCC 27 41 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 64 260 static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current ns m ? r ds(on) static drain-to-source on-resistance parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a ? v dss / ? t j breakdown voltage temp. coefficient CCC 27 CCC m v/c reference to 25c, i d = 1ma CCC 5.8 10.5 v gs = 10v, i d = 15a CCC 7.0 15 v gs = 4.5v, i d = 12a v gs(th) gate threshold voltage CCC 1.5 2.5 v v ds = v gs , i d = 250a ? v gs(th) / ? t j gate threshold voltage coefficient CCC -5.0 CCC mv/c CCC CCC 30 a v ds = 24v, v gs = 0v CCC CCC 150 v ds = 24v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 12v gate-to-source reverse leakage CCC CCC -100 na v gs = -12v g fs forward transconductance 58 CCC CCC s v ds = 15v, i d = 12a q g total gate charge control fet CCC 21 31 nc q gs1 pre-vth gate-source charge CCC 5.0 CCC v ds = 20v q gs2 post-vth gate-source charge CCC 1.7 CCC v gs = 4.5v q gd gate-to-drain charge CCC 6.6 CCC nc i d = 12a q godr gate charge overdrive CCC 5.5 CCC q sw switch charge (q gs2 + q gd ) CCC 8.3 CCC q g total gate charge sync fet CCC 17 q oss output charge CCC 10 CCC v ds = 16v, v gs = 0v r g gate resistance CCC 1.6 CCC t d(on) turn-on delay time CCC 18 CCC v dd = 16v, v gs = 4.5v t r rise time CCC 4.8 CCC i d = 12a t d(off) turn-off delay time CCC 11 CCC clamped inductive load t f fall time CCC 23 CCC c iss input capacitance CCC 2260 CCC v gs = 0v c oss output capacitance CCC 420 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 180 CCC ? = 1.0mhz downloaded from: http:///

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 2.0 3.0 4.0 5.0 6.0 7.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 64a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 20s pulse width tj = 175c vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v 20s pulse width tj = 25c vgs top 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v bottom 2.5v downloaded from: http:///

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 0 1 2 4 5 6 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 12a v = 15v ds v = 24v ds 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec downloaded from: http:///

www.irf.com 5 fig 10a. switching time test circuit v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///

6 www.irf.com d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 14. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 13. threshold voltage vs. temperature 25 50 75 100 125 150 175 0 80 160 240 320 400 starting tj, junction temperature ( c) e , single pulse avalanche energy (mj) as i d top bottom 4.9a 8.5a 12a -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a downloaded from: http:///

www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 15. for n-channel hexfet power mosfets

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12 in the assembly line "a" as s embled on ww 16, 1999 example: wi t h as s e mb l y this is an irfr120 lot code 1234 year 9 = 199 9 dat e code week 16 part number logo international rectifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = designates lead-free product (optional) note: "p" in assembly line position i ndi cates "l ead- f r ee" 12 34 we e k 16 a = as s e mb l y s i t e code part number irfu120 line a logo lot code assembly international rectifier downloaded from: http:///

www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 01/05 repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.9mh r g = 25 ? , i as = 12a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. * when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///

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